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22891102VM04

SKM200GBD126D-M04

SEMITRANS 3, HALA P8

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)150 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITRANS
GehäuseSEMITRANS 3
Abmessungen (LxBxH)106x62x31
TechnologieIGBT
Chip TechnologieIGBT 3 (Trench)
EigenschaftenTrench = Trenchgate technologyV<sub>CE(sat) </sub>with positive temperature coefficientHigh short circuit capability, self limiting to 6 x I<sub>C</sub>UL recognized, file no. E63532
Typische AnwendungsgebieteCurrent source inverter

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHALA P8
Varianten BeschreibungThe SKM200GBD126D-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. During very first operation, the PCM starts to flow, spread out and fill the gaps between module and cooler.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8
Variants<a href="/products/p/skm200gbd126d-m04-22891102vm04">SKM200GBD126D-M04</a><a href="/products/p/skm200gbd126d-22891102">SKM200GBD126D</a>