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21915390VM06

SKM100GB125DN-M06

SEMITRANS 2N, HALA HT

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)95x35x31
Chip TechnologieNPT IGBT (Ultrafast)
EigenschaftenN channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast &amp; soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)
GehäuseSEMITRANS 2N
HerkunftslandItaly
ProduktlinieSEMITRANS
ProduktstatusIn Production
Spannung1200 V
Stromstärke (A)75 A
TechnologieIGBT
TopologieHalf-Bridge
Typische AnwendungsgebieteSwitched mode power supplies at f<sub>sw</sub> &gt; 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> &gt; 20 kHz
VarianteHALA HT
Varianten BeschreibungThe SKM100GB125DN-M06 is a 1200 V IGBT module and comes with pre-applied phase change material HALA HT (λ=3.0 W/mK). HALA HT is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA HT

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.17 Kilogramm
Nettogewicht0.16 Kilogramm
Proposition 65Cancer and Reproductive Harm