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21915390VM06

SKM100GB125DN-M06

SEMITRANS 2N, HALA HT

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandItaly
Stromstärke (A)75 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITRANS
GehäuseSEMITRANS 2N
Abmessungen (LxBxH)95x35x31
TechnologieIGBT
Chip TechnologieNPT IGBT (Ultrafast)
EigenschaftenN channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast &amp; soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)
Typische AnwendungsgebieteSwitched mode power supplies at f<sub>sw</sub> &gt; 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> &gt; 20 kHz

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.17 Kilogramm
Nettogewicht0.16 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHALA HT
Varianten BeschreibungThe SKM100GB125DN-M06 is a 1200 V IGBT module and comes with pre-applied phase change material HALA HT (λ=3.0 W/mK). HALA HT is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA HT
Variants<a href="/products/p/skm100gb125dn-m06-21915390vm06">SKM100GB125DN-M06</a><a href="/products/p/skm100gb125dn-21915390">SKM100GB125DN</a>