21915390VM06
SKM100GB125DN-M06
SEMITRANS 2N, HALA HT
21915390VM06
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 95x35x31 |
| Chip Technologie | NPT IGBT (Ultrafast) |
| Eigenschaften | N channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm) |
| Gehäuse | SEMITRANS 2N |
| Herkunftsland | Italy |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 75 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Type | SEMITRANS 2N |
| Typische Anwendungsgebiete | Switched mode power supplies at f<sub>sw</sub> > 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> > 20 kHz |
| Variant Description | The SKM100GB125DN-M06 is a 1200 V IGBT module and comes with pre-applied phase change material HALA HT (λ=3.0 W/mK). HALA HT is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + Phase Change Material HALA HT |
| Variante | HALA HT |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.17 Kilogramm |
| Nettogewicht | 0.16 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |