22896100
SKM200GB12F4SiC2
SEMITRANS 3
22896100
产品规格
特性 | 值 |
|---|---|
| 产品状态 | In Production New |
| 产品线 | SEMITRANS |
| 典型应用 | AC inverter drivesUPSElectronic weldersDC/DC converters |
| 原产地 | Slovakia |
| 原料号 | 22896100 |
| 型号 | SEMITRANS 3 |
| 外壳 | SEMITRANS 3 |
| 尺寸 | 106x62x31 |
| 技术 | Hybrid SiC |
| 拓扑 | Half-Bridge |
| 特性 | IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With integrated gate resistorFor higher switching frequencies |
| 电压 | 1200 V |
| 电流 | 200 A |
| 芯片技术 | SiC Diode + IGBT 4 fast (Trench) |
一般规格
特性 | 值 |
|---|---|
| 毛重 | 0.32 千克 |
| 净重 | 0.31 千克 |
| Proposition 65 | Cancer and Reproductive Harm |