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24922530

SK80MB120CR03TE1

SEMITOP E1

产品规格

特性
产品状态In Production New
原产地Italy
电流100 A
电压1200 V
拓扑Half-Bridge
产品线SEMITOP
外壳SEMITOP E1
尺寸63x34x12
技术SiC MOSFET
芯片技术Gen 3 SiC MOSFET (WS)
特性Optimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
原料号24922530

一般规格

特性
毛重0.037 千克
净重0.022 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk80mb120cr03te1-m05-24922530vm05">SK80MB120CR03TE1-M05</a><a href="/products/p/sk80mb120cr03te1-m07-24922530vm07">SK80MB120CR03TE1-M07</a>