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230B6988

SK150MB120RM04TE1-M07

SEMITOP E1, HP-PCM

产品规格

特性
值
产品状态In Production New
原产地Italy
电流139 A
电压1200 V
拓扑Half-Bridge
产品线SEMITOP
外壳SEMITOP E1
尺寸63x34x12
技术SiC MOSFET
芯片技术Gen 4 SiC MOSFET (RM)
FeaturesOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar

一般规格

特性
值
毛重0.022 千克
净重0.022 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
值
Variants<a href="/zh-cn/products/p/sk150mb120rm04te1-m07-230b6988">SK150MB120RM04TE1-M07</a><a href="/zh-cn/products/p/sk150mb120rm04te1-m05-230b9702">SK150MB120RM04TE1-M05</a><a href="/zh-cn/products/p/sk150mb120rm04te1-24923550">SK150MB120RM04TE1</a>
产品变体介绍The SK150MB120RM04TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
产品变体简要介绍Module + High Performance Phase Change Material (HP-PCM)
变体HP-PCM