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24923540

SK100MH120RM04ETE2

SEMITOP E2

产品规格

特性
产品状态In Production New
原产地Italy
电流99 A
电压1200 V
拓扑H-Bridge
产品线SEMITOP
外壳SEMITOP E2
尺寸63x57x12
技术SiC MOSFET
芯片技术Gen 4 SiC MOSFET (RM)
特性Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Electric Vehicle chargingEnergy Storage SystemsSolarUPS
原料号24923540

一般规格

特性
毛重0.058 千克
净重0.038 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk100mh120rm04ete2-m05-24923540vm05">SK100MH120RM04ETE2-M05</a><a href="/products/p/sk100mh120rm04ete2-m07-24923540vm07">SK100MH120RM04ETE2-M07</a>