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24923530VM07

SK100MH120RM04ETE1-M07

SEMITOP E1, HP-PCM

产品规格

特性
产品状态In Production New
原产地Italy
电流89 A
电压1200 V
拓扑H-Bridge
产品线SEMITOP
外壳SEMITOP E1
尺寸63x34x12
技术SiC MOSFET
芯片技术Gen 4 SiC MOSFET (RM)
特性Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Electric Vehicle chargingEnergy Storage SystemsSolarUPS
变体HP-PCM

一般规格

特性
毛重0.022 千克
净重0.022 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a>
产品变体介绍The SK100MH120RM04ETE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
产品变体简要介绍Module + High Performance Phase Change Material (HP-PCM)