Overcoming Limitations
To overcome the limitation of current module technology a new bonding and joining technology for power modules has been developed. The solder joint between the DCB-substrate and the semiconductor is replaced by a sintered joint. In addition, a copper plate is sintered on top of the semiconductor surface metallization, and traditional aluminum bond wires are replaced by copper wires.
The combination of these improvements – the sintered connection between semiconduction and DBC-substrate on the bottom-side and ,the sintered copper Bond Buffer on the top-side, forming the interface to the and copper bond wires – is known as Bond Buffer Technology.
A thin copper foil (bond buffer) sintered onto the upper surface topside of the semiconductor, increases the thermal capacitance. This layer provides uniform current distribution (e.g. in short circuit conditions) and better heat dissipation.
Copper bond wires replace aluminum bond wires, offering extra current carrying capacity and better heat conduction and dissipation. This universal top layer is available in custom specific designs as well as in platform products like DCM1000.