Application Manual

In today’s rapidly electrifying world, power semiconductors play a pivotal role in energy generation, transmission, and end use. IGBT and MOSFET power modules are the core components in modern power electronics and are continually expanding into new applications. Alongside these, rectifier diodes and thyristors continue as cost-effective solutions for connecting to the power grid. Understanding the operation of these devices is vital to designing efficient and reliable power systems.

This manual provides fundamental explanations of semiconductor physics in a way that enhances understanding of power electronics in practical applications. A significant portion is dedicated to exploring power semiconductor packaging technologies, detailing their influence on module properties and performance. Component reliability, service life, and the associated testing procedures are also covered.

A key focus of the manual is the analysis of application-specific considerations when selecting components. Topics include proper component sizing for various operating conditions, driver technologies and component protection, thermal dimensioning and heatsink solutions, as well as guidelines for parallel and series circuits. Additionally, it covers optimal power layout to minimize parasitic effects and addresses requirements related to specific ambient conditions.

Since the release of the first Application Manual for IGBT and MOSFET Modules, these components have expanded into a wide array of new applications. This growth has been driven largely by the global push to reduce reliance on fossil fuels, mitigate environmental impact, and embrace renewable energy sources. New development trends, such as the demand for compact designs, cost efficiency, and higher energy performance, coupled with the need for devices to operate in challenging environments like decentralized systems under harsh conditions, have introduced stricter requirements for state-of-the-art power semiconductors.

To address these evolving needs, this updated manual delves deeper than its predecessor into the practical aspects of power semiconductor applications. In addition to IGBT and MOSFET modules, it also covers rectifier diodes and thyristors, providing comprehensive insights.

This manual is tailored primarily for users and consolidates a wealth of practical experience previously scattered across various articles and papers. Where necessary, theoretical concepts are briefly introduced to aid understanding, with recommendations for further reading available in the bibliography.

Drawing on Semikron Danfoss’ extensive expertise, the manual offers in-depth guidance on using power modules based on IGBT, MOSFETs, and advanced diodes, as well as rectifier diodes and thyristors in both module and discrete component forms. It covers critical topics such as interpreting datasheets, performing thermal design and simulations, and applying best practices in areas like cooling, power layout design, driver technology, component protection, and parallel or series connections.

This comprehensive resource is designed to support users in meeting modern application demands and leveraging the full potential of advanced power semiconductors.