
24923170VM06
SK40MLLE120CR03TE1-M06
SEMITOP E1
Product specifications
Characteristic | Value |
---|---|
Chip technology | Gen 3 SiC MOSFET (WS) |
Current (A) | 43 A |
Dimensions (LxWxH) | 63x34x12 |
Features | 1200V Planar Gen3 SiC MOSSiC Schottky diodeIntegrated NTC temperature sensorPress-Fit contact technologyUL recognized file no. E 63 532Extremely low inductance designOptimized design for superior thermal performanceSimple to drive with +15V gate voltageNew PEP diode technology for enhanced power and environmental robustness |
Housing | SEMITOP E1 |
Product Status | In Production New |
Product line | SEMITOP |
Technology | SiC MOSFET |
Topology | Chopper/Booster |
Type | SEMITOP E1 |
Typical applications | Solar |
Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
---|---|
Proposition 65 | Cancer and Reproductive Harm |