22892220VM04
SKM200GB12T4SiC2-M04
SEMITRANS 3, HALA P8
22892220VM04
製品仕様
特徴 | 値 |
|---|---|
| Type | SEMITRANS 3 |
| チップ技術 | SiC Diode + IGBT 4 (Trench) |
| トポロジー | Half-Bridge |
| ハウジング | SEMITRANS 3 |
| バリアント | HALA P8 |
| 代表的なアプリケーション | AC inverter drivesUPSElectronic weldersDC/DC converters |
| 分類の簡単な説明 | Module + Phase Change Material HALA P8 |
| 分類の説明 | The SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| 原産国 | Slovakia |
| 寸法 | 106x62x31 |
| 技術 | Hybrid SiC |
| 特徴 | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| 製品の状態 | In Production New |
| 製品ライン | SEMITRANS |
| 電圧 (V) | 1200 V |
| 電流 (A) | 200 A |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.32 Kilogram |
| 正味重量 | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |