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22892220VM04

SKM200GB12T4SiC2-M04

SEMITRANS 3, HALA P8

製品仕様

特徴
製品の状態In Production New
原産国Slovakia
電流 (A)200 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITRANS
ハウジングSEMITRANS 3
寸法106x62x31
技術Hybrid SiC
チップ技術SiC Diode + IGBT 4 (Trench)
特徴IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies
代表的なアプリケーションAC inverter drivesUPSElectronic weldersDC/DC converters

一般仕様

特徴
総重量0.32 Kilogram
正味重量0.31 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

特徴
Variants<a href="/ja-jp/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a><a href="/ja-jp/products/p/skm200gb12t4sic2-22892220">SKM200GB12T4SiC2</a>
バリアントHALA P8
分類の簡単な説明Module + Phase Change Material HALA P8
分類の説明The SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. During very first operation, the PCM starts to flow, spread out and fill the gaps between module and cooler.