21915390
SKM100GB125DN
SEMITRANS 2N
21915390
製品仕様
特徴 | 値 |
|---|---|
| 製品の状態 | In Production |
| 原産国 | Italy |
| 電流 (A) | 75 A |
| 電圧 (V) | 1200 V |
| トポロジー | Half-Bridge |
| 製品ライン | SEMITRANS |
| ハウジング | SEMITRANS 2N |
| 寸法 | 95x35x31 |
| 技術 | IGBT |
| チップ技術 | NPT IGBT (Ultrafast) |
| Features | N channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm) |
| 代表的なアプリケーション | Switched mode power supplies at f<sub>sw</sub> > 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> > 20 kHz |
| 旧部品番号 | 21915390 |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.17 Kilogram |
| 正味重量 | 0.16 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
特徴 | 値 |
|---|---|
| Variants | <a href="/ja-jp/products/p/skm100gb125dn-m06-21915390vm06">SKM100GB125DN-M06</a><a href="/ja-jp/products/p/skm100gb125dn-21915390">SKM100GB125DN</a> |
| バリアント | No accessory |
| 分類の簡単な説明 | Bare module without pre-applied TIM or lid |
| 分類の説明 | The SKM100GB125DN is a 1200 V IGBT module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |