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21915390

SKM100GB125DN

SEMITRANS 2N

製品仕様

特徴
製品の状態In Production
原産国Italy
電流 (A)75 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITRANS
ハウジングSEMITRANS 2N
寸法95x35x31
技術IGBT
チップ技術NPT IGBT (Ultrafast)
特徴N channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast &amp; soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)
代表的なアプリケーションSwitched mode power supplies at f<sub>sw</sub> &gt; 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> &gt; 20 kHz
Variants<a href="/products/p/skm100gb125dn-m06-21915390vm06">SKM100GB125DN-M06</a>
旧部品番号21915390

一般仕様

特徴
総重量0.17 Kilogram
正味重量0.16 Kilogram
Proposition 65Cancer and Reproductive Harm