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230B6781

SK300MB120RM04TE2-M07

SEMITOP E2, HP-PCM

製品仕様

特徴
値
製品の状態In Production New
原産国Italy
電流 (A)266 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITOP
ハウジングSEMITOP E2
寸法63x57x12
技術SiC MOSFET
チップ技術Gen 4 SiC MOSFET (RM)
FeaturesOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
代表的なアプリケーションSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar

一般仕様

特徴
値
総重量0.058 Kilogram
正味重量0.038 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

特徴
値
Variants<a href="/ja-jp/products/p/sk300mb120rm04te2-24923980">SK300MB120RM04TE2</a><a href="/ja-jp/products/p/sk300mb120rm04te2-m05-230b9715">SK300MB120RM04TE2-M05</a><a href="/ja-jp/products/p/sk300mb120rm04te2-m07-230b6781">SK300MB120RM04TE2-M07</a>
バリアントHP-PCM
分類の簡単な説明Module + High Performance Phase Change Material (HP-PCM)
分類の説明The SK300MB120RM04TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.