24923990
SK200MB120RM04TE2
SEMITOP E2, No accessory
24923990
製品仕様
特徴 | 値 |
|---|---|
| 製品の状態 | In Production New |
| 原産国 | Italy |
| 電流 (A) | 179 A |
| 電圧 (V) | 1200 V |
| トポロジー | Half-Bridge |
| 製品ライン | SEMITOP |
| ハウジング | SEMITOP E2 |
| 寸法 | 63x57x12 |
| 技術 | SiC MOSFET |
| チップ技術 | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| 代表的なアプリケーション | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
| 旧部品番号 | 24923990 |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.038 Kilogram |
| 正味重量 | 0.038 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
特徴 | 値 |
|---|---|
| Variants | <a href="/ja-jp/products/p/sk200mb120rm04te2-24923990">SK200MB120RM04TE2</a><a href="/ja-jp/products/p/sk200mb120rm04te2-m05-230b9714">SK200MB120RM04TE2-M05</a><a href="/ja-jp/products/p/sk200mb120rm04te2-m07-230b6958">SK200MB120RM04TE2-M07</a> |
| バリアント | No accessory |
| 分類の簡単な説明 | Bare module without pre-applied TIM or lid |
| 分類の説明 | The SK200MB120RM04TE2 is a 1200 V SiC MOSFET module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |