24922580VM07
SK200MB120CR03TE2-M07
SEMITOP E2, HP-PCM
24922580VM07
製品仕様
特徴 | 値 |
|---|---|
| 製品の状態 | In Production New |
| 原産国 | Italy |
| 電流 (A) | 223 A |
| 電圧 (V) | 1200 V |
| トポロジー | Half-Bridge |
| 製品ライン | SEMITOP |
| ハウジング | SEMITOP E2 |
| 寸法 | 63x57x12 |
| 技術 | SiC MOSFET |
| チップ技術 | Gen 3 SiC MOSFET (WS) |
| 特徴 | Optimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| 代表的なアプリケーション | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives |
| Variants | <a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a> |
| バリアント | HP-PCM |
| 分類の簡単な説明 | Module + High Performance Phase Change Material (HP-PCM) |
| 分類の説明 | The SK200MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.058 Kilogram |
| 正味重量 | 0.038 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |