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24922580

SK200MB120CR03TE2

SEMITOP E2

製品仕様

特徴
製品の状態In Production New
原産国Italy
電流 (A)223 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITOP
ハウジングSEMITOP E2
寸法63x57x12
技術SiC MOSFET
チップ技術Gen 3 SiC MOSFET (WS)
特徴Optimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
代表的なアプリケーションSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
Variants<a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a>
旧部品番号24922580

一般仕様

特徴
総重量0.058 Kilogram
正味重量0.038 Kilogram
Proposition 65Cancer and Reproductive Harm