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230B6988

SK150MB120RM04TE1-M07

SEMITOP E1, HP-PCM

製品仕様

特徴
製品の状態Sample Status
原産国Italy
電流 (A)139 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITOP
ハウジングSEMITOP E1
寸法63x34x12
技術SiC MOSFET
チップ技術Gen 4 SiC MOSFET (RM)
特徴Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
代表的なアプリケーションSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar

一般仕様

特徴
総重量0.022 Kilogram
正味重量0.022 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

特徴
Variants<a href="/ja-jp/products/p/sk150mb120rm04te1-m07-230b6988">SK150MB120RM04TE1-M07</a><a href="/ja-jp/products/p/sk150mb120rm04te1-m05-230b9702">SK150MB120RM04TE1-M05</a>
バリアントHP-PCM
分類の簡単な説明Module + High Performance Phase Change Material (HP-PCM)
分類の説明The SK150MB120RM04TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.