27895300
SEMiX603GB12E4SiCp
SEMiX 3p
27895300
製品仕様
特徴 | 値 |
|---|---|
| 製品の状態 | In Production |
| 原産国 | Slovakia |
| 電流 (A) | 600 A |
| 電圧 (V) | 1200 V |
| トポロジー | Half-Bridge |
| 製品ライン | SEMiX |
| ハウジング | SEMiX 3p |
| 寸法 | 150x62x17 |
| 技術 | Hybrid SiC |
| チップ技術 | SiC Diode + IGBT 4 (Trench) |
| Features | With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532 |
| 代表的なアプリケーション | AC inverter drivesUPSRenewable energy systems |
| 旧部品番号 | 27895300 |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.381 Kilogram |
| 正味重量 | 0.35 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
特徴 | 値 |
|---|---|
| Variants | <a href="/ja-jp/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/ja-jp/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/ja-jp/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a><a href="/ja-jp/products/p/semix603gb12e4sicp-27895300">SEMiX603GB12E4SiCp</a> |
| バリアント | No accessory |
| 分類の簡単な説明 | Bare module without pre-applied TIM or lid |
| 分類の説明 | The SEMiX603GB12E4SiCp is a 1200 V Hybrid SiC module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |