SKiiP 4 SiC- IPM with 2kV SiC MOSFETs
The SKiiP4 2kV SiC IPM is an intelligent power module designed to simplify and accelerate the the adoption of high-power silicon carbide applications. It integrates in the proven, reliable SKiiP4 package the latest generation high efficiency 2kV SiC Chips, matching gate drivers, current and voltage sensors and high performance liquid cooling and challenges associated with faster switching such as EMI, voltage overshoots and short-circuit protection.
Maximum power and reliability through innovative technology
With a power range of up to 2400A, the SKiiP 4 SiC offers a highly convenient and secure solution for high-power converter designs utilizing SiC technology. The proven high-performance and reliable assembly techniques employed in SKiiP 4 — including silver sintering, baseplate-free construction, and advanced cooling systems — create an optimal environment for maximising the potential of SiC MOSFET devices.
The integrated gate-driver is specifically engineered to suit the MOSFET technology and topology of the SKiiP, ensuring safe and stable operation across the entire operational spectrum. Furthermore, the driver architecture is designed to support the continual advancements in SiC technology, minimizing impact on system design.
SKiiP 4 SiC can be configured in half-bridge and multi-phase topologies, allowing for flexible combinations of power modules mounted on the heat sink. The digital driver interface, inherited from SKiiP4 IGBT including its CAN-bus capability, enables seamless selection between IGBT or SiC-based SKiiPs without requiring modifications to the overall system architecture.