21920420VM04
SKM350MB120SCH17-M04
SEMITRANS 3, HALA P8
21920420VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 478 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 2 SiC MOSFET (RM) |
| Eigenschaften | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)External SiC Schottky Barrier Diode embeddedInsulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532 |
| Typische Anwendungsgebiete | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HALA P8 |
| Varianten Beschreibung | The SKM350MB120SCH17-M04 is a 1200 V SiC MOSFET module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + Phase Change Material HALA P8 |
| Variants | <a href="/products/p/skm350mb120sch17-m04-21920420vm04">SKM350MB120SCH17-M04</a><a href="/products/p/skm350mb120sch17-21920420">SKM350MB120SCH17</a> |