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21920420VM04

SKM350MB120SCH17-M04

SEMITRANS 3, HALA P8

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)106x62x31
Chip TechnologieGen 2 SiC MOSFET (RM)
EigenschaftenFull Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)External SiC Schottky Barrier Diode embeddedInsulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532
GehäuseSEMITRANS 3
HerkunftslandItaly
ProduktlinieSEMITRANS
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)478 A
TechnologieSiC MOSFET
TopologieHalf-Bridge
TypSEMITRANS 3
Typische AnwendungsgebieteHigh frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems
VarianteHALA P8
Varianten BeschreibungThe SKM350MB120SCH17-M04 is a 1200 V SiC MOSFET module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm