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21920190VM05

SKM350MB120SCH15-M05

SEMITRANS 3, HPTP

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)106x62x31
Chip TechnologieGen 2 SiC MOSFET (RM)
EigenschaftenFull Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532
GehäuseSEMITRANS 3
HerkunftslandItaly
ProduktlinieSEMITRANS
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)478 A
TechnologieSiC MOSFET
TopologieHalf-Bridge
TypSEMITRANS 3
Typische AnwendungsgebieteHigh frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems
VarianteHPTP
Varianten BeschreibungThe SKM350MB120SCH15-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.
Varianten KurzbeschreibungModule + High Performance Thermal Paste (HPTP)

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm