21920190VM05
SKM350MB120SCH15-M05
SEMITRANS 3, HPTP
21920190VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | Gen 2 SiC MOSFET (RM) |
| Eigenschaften | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532 |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Italy |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 478 A |
| Technologie | SiC MOSFET |
| Topologie | Half-Bridge |
| Type | SEMITRANS 3 |
| Typische Anwendungsgebiete | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
| Variant Description | The SKM350MB120SCH15-M05 is a 1200 V SiC MOSFET module and comes with a pre-applied 2.8mm height slim pressure lid and High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP provides top-tier thermal performance with optimized filler content. |
| Variant Short Description | Module + High Performance Thermal Paste (HPTP) |
| Variante | HPTP |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |