21920190VM05
SKM350MB120SCH15-M05
SEMITRANS 3, HPTP
21920190VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 478 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 2 SiC MOSFET (RM) |
| Eigenschaften | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532 |
| Typische Anwendungsgebiete | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HPTP |
| Varianten Beschreibung | The SKM350MB120SCH15-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Varianten Kurzbeschreibung | Module + High Performance Thermal Paste (HPTP) |
| Variants | <a href="/products/p/skm350mb120sch15-m05-21920190vm05">SKM350MB120SCH15-M05</a><a href="/products/p/skm350mb120sch15-21920190">SKM350MB120SCH15</a> |