21920190
SKM350MB120SCH15
SEMITRANS 3
21920190
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | Gen 2 SiC MOSFET (RM) |
| Ehemalige Teilenummer | 21920190 |
| Eigenschaften | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532 |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Italy |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 478 A |
| Technologie | SiC MOSFET |
| Topologie | Half-Bridge |
| Typ | SEMITRANS 3 |
| Typische Anwendungsgebiete | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.42 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |