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22892220VM04

SKM200GB12T4SiC2-M04

SEMITRANS 3, HALA P8

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)106x62x31
Chip TechnologieSiC Diode + IGBT 4 (Trench)
EigenschaftenIGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies
GehäuseSEMITRANS 3
HerkunftslandSlovakia
ProduktlinieSEMITRANS
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)200 A
TechnologieHybrid SiC
TopologieHalf-Bridge
TypSEMITRANS 3
Typische AnwendungsgebieteAC inverter drivesUPSElectronic weldersDC/DC converters
VarianteHALA P8
Varianten BeschreibungThe SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm