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22892220VM04

SKM200GB12T4SiC2-M04

SEMITRANS 3, HALA P8

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandSlovakia
Stromstärke (A)200 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITRANS
GehäuseSEMITRANS 3
Abmessungen (LxBxH)106x62x31
TechnologieHybrid SiC
Chip TechnologieSiC Diode + IGBT 4 (Trench)
EigenschaftenIGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies
Typische AnwendungsgebieteAC inverter drivesUPSElectronic weldersDC/DC converters

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHALA P8
Varianten BeschreibungThe SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. During very first operation, the PCM starts to flow, spread out and fill the gaps between module and cooler.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8
Variants<a href="/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a><a href="/products/p/skm200gb12t4sic2-22892220">SKM200GB12T4SiC2</a>