22892220
SKM200GB12T4SiC2
SEMITRANS 3
22892220
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 200 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | Hybrid SiC |
| Chip Technologie | SiC Diode + IGBT 4 (Trench) |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| Typische Anwendungsgebiete | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Ehemalige Teilenummer | 22892220 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | No accessory |
| Varianten Beschreibung | The SKM200GB12T4SiC2 is a 1200 V Hybrid SiC module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |
| Varianten Kurzbeschreibung | Bare module without pre-applied TIM or lid |
| Variants | <a href="/de-de/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a><a href="/de-de/products/p/skm200gb12t4sic2-22892220">SKM200GB12T4SiC2</a> |