22890620VM04
SKM200GB125D-M04
SEMITRANS 3, HALA P8
22890620VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | NPT IGBT (Ultrafast) |
| Eigenschaften | N channel , homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (13 mm) and creepage distance (20 mm) |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Slovakia |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 150 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Typische Anwendungsgebiete | Switched mode power supplies at f<sub>sw </sub>> 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw </sub>> 20 kHz |
| Variante | HALA P8 |
| Varianten Beschreibung | The SKM200GB125D-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + Phase Change Material HALA P8 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |