22890620
SKM200GB125D
SEMITRANS 3
22890620
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 150 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | IGBT |
| Chip Technologie | NPT IGBT (Ultrafast) |
| Eigenschaften | N channel , homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (13 mm) and creepage distance (20 mm) |
| Typische Anwendungsgebiete | Switched mode power supplies at f<sub>sw </sub>> 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw </sub>> 20 kHz |
| Ehemalige Teilenummer | 22890620 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variants | <a href="/products/p/skm200gb125d-m04-22890620vm04">SKM200GB125D-M04</a><a href="/products/p/skm200gb125d-22890620">SKM200GB125D</a> |