21915390
SKM100GB125DN
SEMITRANS 2N
21915390
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Italy |
| Stromstärke (A) | 75 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 2N |
| Abmessungen (LxBxH) | 95x35x31 |
| Technologie | IGBT |
| Chip Technologie | NPT IGBT (Ultrafast) |
| Eigenschaften | N channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm) |
| Typische Anwendungsgebiete | Switched mode power supplies at f<sub>sw</sub> > 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> > 20 kHz |
| Ehemalige Teilenummer | 21915390 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.17 Kilogramm |
| Nettogewicht | 0.16 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variants | <a href="/products/p/skm100gb125dn-m06-21915390vm06">SKM100GB125DN-M06</a><a href="/products/p/skm100gb125dn-21915390">SKM100GB125DN</a> |