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23916200VM05

SKiM200GD126D-M05

SKiM 4, HPTP

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)123x107x35
Chip TechnologieIGBT 3 (Trench)
EigenschaftenIGBT 3 Trench Gate TechnologySolderless sinter technologyV<sub>CE(sat)</sub> with positive temperature coefficientLow inductance caseIsolated by Al<sub>2</sub>O<sub>3</sub> DCB (Direct Copper Bonded) ceramic substratePressure contact technology for thermal contacts and electrical contactsHigh short circuit capability, self limiting to 6 x I<sub>C</sub>Integrated temperature sensor
GehäuseSKiM 4
HerkunftslandItaly
ProduktlinieSKiM 4/5
ProduktstatusIn Production
Spannung1200 V
Stromstärke (A)200 A
TechnologieIGBT
TopologieSixpack
TypSKiM 4
Typische AnwendungsgebieteAutomotive inverterHigh reliability AC inverter windHigh reliability AC inverter drives
VarianteHPTP
Varianten BeschreibungThe SKiM200GD126D-M05 is a 1200 V IGBT module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.
Varianten KurzbeschreibungModule + High Performance Thermal Paste (HPTP)

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.441 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm