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23916200VM01

SKiM200GD126D-M01

SKiM 4, Wacker P12

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)123x107x35
Chip TechnologieIGBT 3 (Trench)
EigenschaftenIGBT 3 Trench Gate TechnologySolderless sinter technologyV<sub>CE(sat)</sub> with positive temperature coefficientLow inductance caseIsolated by Al<sub>2</sub>O<sub>3</sub> DCB (Direct Copper Bonded) ceramic substratePressure contact technology for thermal contacts and electrical contactsHigh short circuit capability, self limiting to 6 x I<sub>C</sub>Integrated temperature sensor
GehäuseSKiM 4
HerkunftslandItaly
ProduktlinieSKiM 4/5
ProduktstatusIn Production
Spannung1200 V
Stromstärke (A)200 A
TechnologieIGBT
TopologieSixpack
TypSKiM 4
Typische AnwendungsgebieteAutomotive inverterHigh reliability AC inverter windHigh reliability AC inverter drives
VarianteWacker P12
Varianten BeschreibungThe SKiM200GD126D-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a silicone-based thermal paste with optimized thickness and honeycomb print, enhancing heat dissipation.
Varianten KurzbeschreibungModule + Thermal Paste Wacker P12

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.441 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm