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23916200VM01

SKiM200GD126D-M01

SKiM 4, Wacker P12

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandItaly
Stromstärke (A)200 A
Spannung1200 V
TopologieSixpack
ProduktlinieSKiM 4/5
GehäuseSKiM 4
Abmessungen (LxBxH)123x107x35
TechnologieIGBT
Chip TechnologieIGBT 3 (Trench)
EigenschaftenIGBT 3 Trench Gate TechnologySolderless sinter technologyV<sub>CE(sat)</sub> with positive temperature coefficientLow inductance caseIsolated by Al<sub>2</sub>O<sub>3</sub> DCB (Direct Copper Bonded) ceramic substratePressure contact technology for thermal contacts and electrical contactsHigh short circuit capability, self limiting to 6 x I<sub>C</sub>Integrated temperature sensor
Typische AnwendungsgebieteAutomotive inverterHigh reliability AC inverter windHigh reliability AC inverter drives

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.441 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteWacker P12
Varianten BeschreibungThe SKiM200GD126D-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a silicone-based thermal paste with optimized thickness and honeycomb print, enhancing heat dissipation.
Varianten KurzbeschreibungModule + Thermal Paste Wacker P12
Variants<a href="/products/p/skim200gd126d-m01-23916200vm01">SKiM200GD126D-M01</a><a href="/products/p/skim200gd126d-m05-23916200vm05">SKiM200GD126D-M05</a><a href="/products/p/skim200gd126d-23916200">SKiM200GD126D</a>