25231930M01
SKiiP 38NAB12T7V1-M01
MiniSKiiP II 3, Wacker P12
25231930M01
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 82x59x16 |
| Chip Technologie | IGBT T7 |
| Eigenschaften | 1200V Generation 7 IGBTs (T7)Robust and soft switching freewheeling diodes in CAL technologyNew SKR PEP diode technology for enhanced power and environmental robustnessHighly reliable spring contacts for electrical connectionsUL recognized: File no. E63532 |
| Gehäuse | MiniSKiiP II 3 |
| Herkunftsland | Germany |
| Produktlinie | MiniSKiiP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 100 A |
| Technologie | IGBT |
| Topologie | CIB |
| Typ | MiniSKiiP II 3 |
| Variante | Wacker P12 |
| Varianten Beschreibung | The SKiiP 38NAB12T7V1-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a standard silicone-based thermal paste which has been adjusted to the respective module in terms of layer thickness |
| Varianten Kurzbeschreibung | Module + Thermal Paste Wacker P12 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.1 Kilogramm |
| Nettogewicht | 0.082 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |