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25231050M01

SKiiP 35NAC12F4V1-M01

MiniSKiiP II 3, Wacker P12

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)82x59x16
Chip TechnologieIGBT 4 Fast (Trench)
EigenschaftenFast Trench 4 IGBTsRobust and soft switching diodes in CAL technologyNEW SKR PEP diode-technology for enhanced power and environmental robustnessHighly reliable spring contacts for electrical connectionsUL recognized: File no. E63532
GehäuseMiniSKiiP II 3
HerkunftslandGermany
ProduktlinieMiniSKiiP
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)50 A
TechnologieIGBT
TopologieCI
TypMiniSKiiP II 3
VarianteWacker P12
Varianten BeschreibungThe SKiiP 35NAC12F4V1-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a standard silicone-based thermal paste which has been adjusted to the respective module in terms of layer thickness
Varianten KurzbeschreibungModule + Thermal Paste Wacker P12

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.1 Kilogramm
Nettogewicht0.082 Kilogramm
Proposition 65Cancer and Reproductive Harm