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25231240M01

SKiiP 35NAB12T7V1-M01

MiniSKiiP II 3, Wacker P12

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandChinaGermany
Stromstärke (A)50 A
Spannung1200 V
TopologieCIB
ProduktlinieMiniSKiiP
GehäuseMiniSKiiP II 3
Abmessungen (LxBxH)82x59x16
TechnologieIGBT
Chip TechnologieIGBT T7
Eigenschaften1200V Generation 7 IGBTs (T7)Robust and soft switching freewheeling diodes in CAL technologyNew SKR PEP diode technology for enhanced power and environmental robustnessHighly reliable spring contacts for electrical connectionsUL recognized: File no. E63532

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.1 Kilogramm
Nettogewicht0.082 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteWacker P12
Varianten BeschreibungThe SKiiP 35NAB12T7V1-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a standard silicone-based thermal paste which has been adjusted to the respective module in terms of layer thickness
Varianten KurzbeschreibungModule + Thermal Paste Wacker P12
Variants<a href="/products/p/skiip-35nab12t7v1-m01-25231240m01">SKiiP 35NAB12T7V1-M01</a><a href="/products/p/skiip-35nab12t7v1-m10-25231240m10">SKiiP 35NAB12T7V1-M10</a><a href="/products/p/skiip-35nab12t7v1-m15-25231240m15">SKiiP 35NAB12T7V1-M15</a><a href="/products/p/skiip-35nab12t7v1-m20-25231240m20">SKiiP 35NAB12T7V1-M20</a><a href="/products/p/skiip-35nab12t7v1-m25-25231240m25">SKiiP 35NAB12T7V1-M25</a>