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24922530VM07

SK80MB120CR03TE1-M07

SEMITOP E1, HP-PCM

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)63x34x12
Chip TechnologieGen 3 SiC MOSFET (WS)
EigenschaftenOptimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
GehäuseSEMITOP E1
HerkunftslandItaly
ProduktlinieSEMITOP
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)100 A
TechnologieSiC MOSFET
TopologieHalf-Bridge
TypSEMITOP E1
Typische AnwendungsgebieteSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
VarianteHP-PCM
Varianten BeschreibungThe SK80MB120CR03TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.022 Kilogramm
Nettogewicht0.022 Kilogramm
Proposition 65Cancer and Reproductive Harm