24922530VM05
SK80MB120CR03TE1-M05
SEMITOP E1, HPTP
24922530VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x34x12 |
| Chip Technologie | Gen 3 SiC MOSFET (WS) |
| Eigenschaften | Optimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E1 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 100 A |
| Technologie | SiC MOSFET |
| Topologie | Half-Bridge |
| Typ | SEMITOP E1 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives |
| Variante | HPTP |
| Varianten Beschreibung | The SK80MB120CR03TE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Varianten Kurzbeschreibung | Module + High Performance Thermal Paste (HPTP) |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.022 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |