24922530
SK80MB120CR03TE1
SEMITOP E1
24922530
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 100 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E1 |
| Abmessungen (LxBxH) | 63x34x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 3 SiC MOSFET (WS) |
| Eigenschaften | Optimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives |
| Ehemalige Teilenummer | 24922530 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.037 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variants | <a href="/products/p/sk80mb120cr03te1-m05-24922530vm05">SK80MB120CR03TE1-M05</a><a href="/products/p/sk80mb120cr03te1-m07-24922530vm07">SK80MB120CR03TE1-M07</a><a href="/products/p/sk80mb120cr03te1-24922530">SK80MB120CR03TE1</a> |