24923870
SK35DGDL12RAETE2
SEMITOP E2
24923870
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 35 A |
| Spannung | 1200 V |
| Topologie | CIB |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E2 |
| Abmessungen (LxBxH) | 63x57x12 |
| Technologie | IGBT |
| Chip Technologie | RGA |
| Eigenschaften | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Ehemalige Teilenummer | 24923870 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variants | <a href="/products/p/sk35dgdl12raete2-m07-24923870vm07">SK35DGDL12RAETE2-M07</a><a href="/products/p/sk35dgdl12raete2-24923870">SK35DGDL12RAETE2</a> |