24923430VM07
SK30DMD120RM04ETE2-M07
SEMITOP E2, HP-PCM
24923430VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 29 A |
| Spannung | 1200 V |
| Topologie | CI |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E2 |
| Abmessungen (LxBxH) | 63x57x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Eigenschaften | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Motor drivesServo drivesHVACAir conditioningHeat pumpsAuxiliary convertersUPS |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HP-PCM |
| Varianten Beschreibung | The SK30DMD120RM04ETE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
| Variants | <a href="/products/p/sk30dmd120rm04ete2-m07-24923430vm07">SK30DMD120RM04ETE2-M07</a><a href="/products/p/sk30dmd120rm04ete2-24923430">SK30DMD120RM04ETE2</a> |