24923430VM07
SK30DMD120RM04ETE2-M07
SEMITOP E2, HP-PCM
24923430VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x57x12 |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Eigenschaften | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E2 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 29 A |
| Technologie | SiC MOSFET |
| Topologie | CI |
| Type | SEMITOP E2 |
| Typische Anwendungsgebiete | Motor drivesServo drivesHVACAir conditioningHeat pumpsAuxiliary convertersUPS |
| Variant Description | The SK30DMD120RM04ETE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Variante | HP-PCM |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |