230B6781
SK300MB120RM04TE2-M07
SEMITOP E2, HP-PCM
230B6781
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 266 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E2 |
| Abmessungen (LxBxH) | 63x57x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HP-PCM |
| Varianten Beschreibung | The SK300MB120RM04TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
| Variants | <a href="/de-de/products/p/sk300mb120rm04te2-24923980">SK300MB120RM04TE2</a><a href="/de-de/products/p/sk300mb120rm04te2-m05-230b9715">SK300MB120RM04TE2-M05</a><a href="/de-de/products/p/sk300mb120rm04te2-m07-230b6781">SK300MB120RM04TE2-M07</a> |