24923880VM07
SK25DGDL12RAETE2-M07
SEMITOP E2, HP-PCM
24923880VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x57x12 |
| Chip Technologie | RGA |
| Eigenschaften | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E2 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 25 A |
| Technologie | IGBT |
| Topologie | CIB |
| Typ | SEMITOP E2 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Variante | HP-PCM |
| Varianten Beschreibung | The SK25DGDL12RAETE2-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |