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24922590VM07

SK250MB120CR03TE2-M07

SEMITOP E2, HP-PCM

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandItaly
Stromstärke (A)267 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITOP
GehäuseSEMITOP E2
Abmessungen (LxBxH)63x57x12
TechnologieSiC MOSFET
Chip TechnologieGen 3 SiC MOSFET (WS)
EigenschaftenOptimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.058 Kilogramm
Nettogewicht0.038 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SK250MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk250mb120cr03te2-m05-24922590vm05">SK250MB120CR03TE2-M05</a><a href="/products/p/sk250mb120cr03te2-m07-24922590vm07">SK250MB120CR03TE2-M07</a><a href="/products/p/sk250mb120cr03te2-24922590">SK250MB120CR03TE2</a>