24923990
SK200MB120RM04TE2
SEMITOP E2, No accessory
24923990
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 179 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E2 |
| Abmessungen (LxBxH) | 63x57x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
| Ehemalige Teilenummer | 24923990 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.038 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | No accessory |
| Varianten Beschreibung | The SK200MB120RM04TE2 is a 1200 V SiC MOSFET module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |
| Varianten Kurzbeschreibung | Bare module without pre-applied TIM or lid |
| Variants | <a href="/de-de/products/p/sk200mb120rm04te2-24923990">SK200MB120RM04TE2</a><a href="/de-de/products/p/sk200mb120rm04te2-m05-230b9714">SK200MB120RM04TE2-M05</a><a href="/de-de/products/p/sk200mb120rm04te2-m07-230b6958">SK200MB120RM04TE2-M07</a> |