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24922580VM07

SK200MB120CR03TE2-M07

SEMITOP E2, HP-PCM

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandItaly
Stromstärke (A)223 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITOP
GehäuseSEMITOP E2
Abmessungen (LxBxH)63x57x12
TechnologieSiC MOSFET
Chip TechnologieGen 3 SiC MOSFET (WS)
EigenschaftenOptimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.058 Kilogramm
Nettogewicht0.038 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SK200MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a><a href="/products/p/sk200mb120cr03te2-24922580">SK200MB120CR03TE2</a>