
24923800VM07
SK15DGDL12RAETE1-M07
SEMITOP E1, HP-PCM
24923800VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x34x12 |
| Chip Technologie | RGA |
| Eigenschaften | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E1 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | Sample Status |
| Spannung | 1200 V |
| Stromstärke (A) | 15 A |
| Technologie | IGBT |
| Topologie | CIB |
| Typ | SEMITOP E1 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Variante | HP-PCM |
| Varianten Beschreibung | The SK15DGDL12RAETE1-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.037 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |