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230B6988

SK150MB120RM04TE1-M07

SEMITOP E1, HP-PCM

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusSample Status
HerkunftslandItaly
Stromstärke (A)139 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITOP
GehäuseSEMITOP E1
Abmessungen (LxBxH)63x34x12
TechnologieSiC MOSFET
Chip TechnologieGen 4 SiC MOSFET (RM)
FeaturesOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.022 Kilogramm
Nettogewicht0.022 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SK150MB120RM04TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/de-de/products/p/sk150mb120rm04te1-m07-230b6988">SK150MB120RM04TE1-M07</a><a href="/de-de/products/p/sk150mb120rm04te1-m05-230b9702">SK150MB120RM04TE1-M05</a><a href="/de-de/products/p/sk150mb120rm04te1-24923550">SK150MB120RM04TE1</a>